INTERNAL MEMORY

Question 1

Core Magnetic Memory

Answer 1

A pre-semiconductor technology where information is stored as a binary 1 or 0 based on the magnetic polarity of each core.

Question 2

RAM (Random-Access Memory

Answer 2

Read-write memory that is typically volatile, meaning data is lost when power is turned off.

Question 3

PROM (Programmable ROM)

Answer 3

Non-volatile, read-mostly memory that can be written to only once (One-Time Programmable) using electrical mechanisms.

Question 4

ROM (Read-Only Memory)

Answer 4

Non-volatile memory that is read-only or read-mostly; data is not lost when power is turned off.

Question 5

EPROM (Erasable PROM

Answer 5

Non-volatile memory that can be erased repeatedly using UV light and is more expensive than PROM.

Question 6

EEPROM (Electrically Erasable PROM)

Answer 6

Non-volatile, read-mostly memory that can be electrically erased at the byte level.

Question 7

Flash Memory Erasure Mechanism

Answer 7

Electrically erased in large blocks, making it generally denser and more cost-effective than EEPROM.

Question 8

Static RAM (SRAM) vs. DRAM

Answer 8

SRAM is faster and does not require periodic refreshing; DRAM is denser and cheaper but requires continuous refreshing.

Question 9

Function of ECC (Error-Correcting Code)

Answer 9

A code that allows for the detection and correction of single-bit errors, and the detection of double-bit errors.

Question 10

Hamming Code Use of Parity Bits

Answer 10

Parity bits are chosen so that the total number of ‘1s’ in its associated set (or circle in a Venn diagram) is even.